型号:

STS9D8NH3LL

RoHS:无铅 / 符合
制造商:STMicroelectronics描述:MOSFET DUAL N-CHAN 30V 9A 8-SOIC
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
STS9D8NH3LL PDF
其它有关文件 STS9D8NH3LL View All Specifications
产品目录绘图 ST Series 8-SOIC, 8-TSSOP
标准包装 2,500
系列 STripFET™
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 8A,9A
开态Rds(最大)@ Id, Vgs @ 25° C 22 毫欧 @ 4A,10V
Id 时的 Vgs(th)(最大) 1V @ 250µA
闸电荷(Qg) @ Vgs 10nC @ 4.5V
输入电容 (Ciss) @ Vds 857pF @ 25V
功率 - 最大 2W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SO
包装 带卷 (TR)
产品目录页面 1544 (CN2011-ZH PDF)
其它名称 497-6030-2
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